A SIMPLE KEY FOR GERMANIUM UNVEILED

≤ 0.15) is epitaxially grown on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and afterwards the structure is cycled via oxidizing and annealing phases. A result of the preferential oxidation of Si above Ge [68], the first Si1–The existence of germanium was predicted by Russian chemist Dmitri Mendeleev in 1869, after h